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| Santa Ana Division MSAFA1N100P3 MOSFET Device Features * * * * * * * * Low On-State resistance Avalanche and Surge Rated High Frequency Switching Ultra low Leakage Current UIS rated Available with Lot Acceptance Testing "L" Suffix Available with "J" leads 1 Amp 1000 V N-Channel enhancement mode high density Applications Implantable Cardio Defibrillator Testing and Screening (per lot) * 100% Testing at 25C, DC parameters * Sample Test (22/0), AC, Hot and Cold Parameters (min/max limits) Maximum Ratings SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS TJ, TSTG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25 Continuous Drain Current @ TC = 100 Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Operating and Storage: Junction Temperature Range VALUE 1000 20 1 0.8 4 1 TBD TBD -55 to 150 UNIT Volts Volts Amps Amps Amps Amps mJ mJ C Static Electrical Characteristics SYMBOL BVDSS VGS(TH)2 VGS(TH)1 RDS(ON)1 RDS(ON)2 RDS(ON)3 RDS(ON)4 RDS(ON)5 IDSS1 IDSS2 IDSS3 IGSS1 IGSS2 IGSS3 CHARACTERISTIC / TEST CONDITIONS MIN Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA) 1000 Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37C) Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25C) 2 Drain - Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25C) Drain - Source On-State Resistance (VGS = 7V, ID = 5...150 mA, TJ= 37C) Drain - Source On-State Resistance (VGS = 7V, ID = 5...150 mA, TJ= 25C) Drain - Source On-State Resistance (VGS = 7V, ID = 5...150 mA, TJ= 60C) Drain - Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 25C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 37C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 125C) Gate-Source Leakage Current (VGS = 20V, VCE =0V) Gate-Source Leakage Current (VGS= 20V VCE =0V), Tj= 37C Gate-Source Leakage Current (VGS= 20V VCE =0V), Tj= 125C TYP 3.4 3.5 12.5 12.5 11.5 15 23.5 1 MAX UNIT Volts Volts 4.5 Volts 13.5 ohm ohm 14 ohm ohm ohm 10 uA uA 100 uA 100 nA nA 500 nA 10 2830 south Fairview Street, Santa Ana, CA 92704 USA (714)979.8220 FAX (714)557.5989 www.MICROSEMI.com Data Sheet # MSC Updated: December 1999 Santa Ana Division MSAFA1N100P3 Fast MOSFET for Implantable Cardio Defibrillator Applicaions Dynamic Electrical Characteristics SYMBOL Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf td (on) tr td (off) tf VSD trr Qrr CHARACTERISTIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge TEST CONDITIONS VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDS = 0.5BVDSS IC = 20 mA Resistive Switching (25C) VGS = 10V, VDS = 0.5BVDSS ID = 20 mA Rg = 1.6 Ohms Resistive Switching (25C) VGS = 10V, VDS = 0.5BVDSS ID = 100 mA Rg = 1.6 Ohms VGS =0 V, IS = 1 A IS = 1 A, d IS / dt = 100 A/us IS = 1 A, d IS / dt = 100 A/us MIN TYP 290 36 15 20 1 10 6.3 5.9 315 2.6 6.3 5.8 76 470 MAX 350 45 25 UNIT pF pF pF nC nC nC ns ns ns us ns ns ns ns V ns uC 1 130 0.7 2830 south Fairview Street, Santa Ana, CA 92704 USA (714)979.8220 FAX (714)557.5989 www.MICROSEMI.com Data Sheet # MSC Updated: December 1999 |
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